Orientation dependence of morphology of (Hg, Cd)Te films grown by isothermal vapor phase epitaxy

Hg 1− x Cd x Te (MCT) films were grown by isothermal vapor phase epitaxy at a temperature of 593 ± 1 ° C for 24 h on CdTe substrates with different crystalline orientations: ( 1 1 1) Te , (111) Cd, (100) and (110). The film surfaces were observed by optical and scanning electron microscopies, and th...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-11, Vol.27 (2), p.87-91
Main Authors: Trigubó, A.B., de Reca, N.E.Walsöe
Format: Article
Language:English
Subjects:
Crystalline orientation
ISOVPE
ISOVPE films morphology
Mercury cadmium telluride
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Summary:Hg 1− x Cd x Te (MCT) films were grown by isothermal vapor phase epitaxy at a temperature of 593 ± 1 ° C for 24 h on CdTe substrates with different crystalline orientations: ( 1 1 1) Te , (111) Cd, (100) and (110). The film surfaces were observed by optical and scanning electron microscopies, and their compositions were determined using an electron microprobe. The electrical characterization was performed by Hall measurements (resistivity, carrier density and mobility). The crystalline quality of the MCT films was evaluated and the surface morphology was related to the substrate orientation.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90127-9