Preparation of oxynitride thin films of BaNb(O yN) x and LaNb(O yN 2) x using reactive sputtering from multiphase powder targets

Thin films of BaNb(O y N) x and LaNb(O y N 2) x have been prepared by reactive sputtering. The targets used were multiphase ones. A wide anion composition range is obtained, including the more difficult to obtain compositions having high concentrations of nitrogen. The Ba based films exhibit a cryst...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-07, Vol.25 (2), p.197-202
Main Authors: Cohen, Yoel, Riess, Ilan
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:Thin films of BaNb(O y N) x and LaNb(O y N 2) x have been prepared by reactive sputtering. The targets used were multiphase ones. A wide anion composition range is obtained, including the more difficult to obtain compositions having high concentrations of nitrogen. The Ba based films exhibit a crystalline structure with a lattice parameter slightly larger than that reported for bulk BaNbO 2N. The La based films are amorphous. The films have a low electronic conductivity. The stoichiometric Ba based films are stable on Si in a reducing atmosphere up to approximately 875°C, while the La based ones are stable up to approximately 480°C.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90225-9