Spatially resolved photoluminescence and electron-beam-induced current studies of a coincidence [formula omitted] silicon bicrystal

Spatially resolved photoluminescence (PL) and electron-beam-induced current (EBIC) measurements were performed on a heat-treated ϵ = 25 silicon bicrystal at 4.2 and 300 K. The early stages of both profiles across the grain boundary (GB) obtained for PL and EBIC scans were interpreted in terms involv...

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Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1994-05, Vol.24 (1), p.184-187, Article 184
Main Authors: Rizk, R., Cruege, F., Madelon, R., Nouet, G.
Format: Article
Language:English
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Summary:Spatially resolved photoluminescence (PL) and electron-beam-induced current (EBIC) measurements were performed on a heat-treated ϵ = 25 silicon bicrystal at 4.2 and 300 K. The early stages of both profiles across the grain boundary (GB) obtained for PL and EBIC scans were interpreted in terms involving the existence of a denuded zone on either side of the GB. Otherwise, a dissociation mechanism, due to GB precipitates, of the condensed and free excitons is evidenced and has led to the determination of the spatial distribution of these particles.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(94)90324-7