Semi-insulating properties control by cvd process modelling

SIPOS films were deposited from a mixture of disilane and nitrous oxide in a tubular hot wall reactor and their thickness and oxygen content were measured. A detailed chemical mechanism is proposed to represent homogeneous and heterogeneous reactions and the CVD2 model taking into account hydrodynam...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1996-02, Vol.37 (1), p.30-34
Main Authors: Cordier, C., Dehan, E., Scheid, E., Duverneuil, P.
Format: Article
Language:English
Subjects:
Deposition
Modelisation
Silicon
Silicon oxide
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Summary:SIPOS films were deposited from a mixture of disilane and nitrous oxide in a tubular hot wall reactor and their thickness and oxygen content were measured. A detailed chemical mechanism is proposed to represent homogeneous and heterogeneous reactions and the CVD2 model taking into account hydrodynamics and mass transfer with chemical reactions is adjusted to SIPOS deposition. A good agreement between experimental results and model predictions for various operating conditions is obtained. By the use of CVD2 model, the main chemical pathways are identified and an extensive comprehension of the experimental evidences is possible.
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(95)01453-5