Influence of preparation conditions on photo- and thermo-structural changes of AsxS1−x films

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1996-03, Vol.38 (1-2), p.122-126
• Main Authors: Mikla, Victor, Fedelesh, Vasilij, Stefanovich, Vladimir, Slivka, Vladimir
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Metastable phases; Photostructural changes; Physics; Raman spectroscopy; Structure and morphology; thickness; Sulphides; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thermostructural changes; Thin film structure and morphology; Thin films
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/0921-5107(95)01510-8

Photo- and thermo-structural changes occuring in vaccum-deposited amorphous chalcogenide films prepared by different methods have been investigated using Raman scattering. The changes in the Raman spectra of conventionally prepared amorphous As2S3 films after light treatment are interpreted in terms of rearrangement of bonding configurations of molecular species that exist just after evaporation. As the evaporation temperature or deposition rate is increased, heat or light treatment induces the formation of microcrystallites. The reversible photo-induced changes in well-annealed films involve a vanishingly small change in bonding statistics. The most significant photostructural change occurs in the medium-range order.