A silicon ultraviolet detector

A selective photodetector for ultraviolet light has been developed. The detector consists of an integrated combination of a selective photodiode and an interference filter. The doping profile of the diode was devised in such a way that a sharp potential barrier for holes appears at a depth of about...

Full description

Saved in:
Bibliographic Details
Published in:Sensors and actuators. A. Physical. 1990-06, Vol.22 (1-3), p.553-558
Main Authors: Popović, R.S., Solt, K., Falk, U., Stoessel, Z.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A selective photodetector for ultraviolet light has been developed. The detector consists of an integrated combination of a selective photodiode and an interference filter. The doping profile of the diode was devised in such a way that a sharp potential barrier for holes appears at a depth of about 100 nm. The photosensitive region of the diode is located between the surface and this barrier. The diode surface was covered by a Fabry-Perot-type Al-SiO2-Al interference filter. The detector was fabricated using the methods of silicon IC technology. The ratio of the photoresponsivities at 300 nm and 1 μm was about 104.
ISSN:0924-4247
1873-3069
DOI:10.1016/0924-4247(89)80034-2