Planar epitaxial avalanche photodiodes with enhamed blue sensitivity for scintillation detectors

An avalanche photodiode based on epitaxial silicon material is described. A quantum efficiency of about 60% at a wavelength λ = 400 nm was obtained. Alpha particles with an energy of 5.48 MeV were detected by a combination of a CaF2:Eu crystal and an avalanche photodiode. The simplicity of the fabri...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 1990-06, Vol.22 (1-3), p.570-573
Main Authors: Boslau, O., Von Münch, W.
Format: Article
Language:English
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Summary:An avalanche photodiode based on epitaxial silicon material is described. A quantum efficiency of about 60% at a wavelength λ = 400 nm was obtained. Alpha particles with an energy of 5.48 MeV were detected by a combination of a CaF2:Eu crystal and an avalanche photodiode. The simplicity of the fabrication process, which requires only three masking steps, allows the generation of a linear array of avalanche photodiodes.
ISSN:0924-4247
1873-3069
DOI:10.1016/0924-4247(89)80037-8