Electrostatic-comb drive of lateral polysilicon resonators

This paper investigates, the electrostatic drive and sense of polysilicon resonators parallel to the substrate, using an interdigitated capacitor (electrostatic comb). Three experimental methods are used: microscopic observation with continuous or stroboscopic illumination, capacitive sensing using...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 1990-02, Vol.21 (1), p.328-331
Main Authors: Tang, William C., Nguyen, Tu-Cuong H., Judy, Michael W., Howe, Roger T.
Format: Article
Language:English
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Summary:This paper investigates, the electrostatic drive and sense of polysilicon resonators parallel to the substrate, using an interdigitated capacitor (electrostatic comb). Three experimental methods are used: microscopic observation with continuous or stroboscopic illumination, capacitive sensing using an amplitude-modulation technique and SEM observation. The intrinsic quality factor of the phosphorus-doped low-pressure chemical-vapor-deposited (LPCVD) polysilicon resonators is 49 000 ± 2000, whereas at atmospheric pressure, Q < 100. The finger gap is found to have a more pronounced effect on comb characteristics than finger width or length, as expected from simple theory
ISSN:0924-4247
1873-3069
DOI:10.1016/0924-4247(90)85065-C