SOS strain gauge sensors for force and pressure transducers

A set of semiconductor force and pressure sensors developed on the basis of heteroepitaxial layers of silicon on sapphire (SOS) is briefly described. Physico-technological optimization of the SOS sensing elements makes it possible to create transducers for pressure measurement of cryogenic (down to...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 1991-08, Vol.28 (3), p.207-213
Main Author: Stuchebnikov, V.M.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Metrology, measurements and laboratory procedures
Physics
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Summary:A set of semiconductor force and pressure sensors developed on the basis of heteroepitaxial layers of silicon on sapphire (SOS) is briefly described. Physico-technological optimization of the SOS sensing elements makes it possible to create transducers for pressure measurement of cryogenic (down to 1 K), normal- and high-temperature (up to 350 °C) media without compensating elements and with a very small error due to temperature sensitivity, as well as radiation-resistant transducers.
ISSN:0924-4247
1873-3069
DOI:10.1016/0924-4247(91)85009-D