Piezoelectrically driven silicon beam force sensor

A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of abo...

Full description

Saved in:
Bibliographic Details
Published in:Sensors and actuators. A. Physical. 1991-03, Vol.26 (1), p.379-383
Main Authors: Van Mullem, C.J., Blom, F.R., Fluitman, J.H.J., Elwenspoek, M.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A resonant silicon beam force sensor with piezoelectric excitation and detection is being developed. The realization is based on IC and thin-film technology with ZnO as the piezoelectrical layer. The theory, realization and measurements of a bent-frame sensors are described. A frequency shift of about 3.3 times the unloaded resonance frequency ƒ 0 (ƒ 0 ⋍ 6 kHz) is measured with an external load force up to 0.4 N. The absolute sensitivity of the force sensor is 64 kHz/N and the full-scale sensitivity is 29 kHz/N. Using a simple model for the load-force transduction from external to sensor force, the measurements are in good agreement with the theory.
ISSN:0924-4247
1873-3069
DOI:10.1016/0924-4247(91)87019-Y