A monolithically integrated sensor system using sensor-specific CMOS cells

• Published in: Sensors and actuators. A, Physical Physical, 1995, Vol.46 (1), p.137-142
• Main Authors: Weber, J., Seitz, S., Steger, U., Folkmer, B., Schaber, U., Plettner, A., Offereins, H.L., Sandmeier, H., Lindner, E.
• Format: Article
• Language: English
• Subjects: Applied sciences; CMOS cells; Electronics; Exact sciences and technology; Instruments for strain, force and torque; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Lithography, masks and pattern transfer; Mechanical instruments, equipment and techniques; Microelectronic fabrication (materials and surfaces technology); Monolithically integrated pressure sensors; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensor systems
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/0924-4247(94)00877-K

A 1 bar pressure sensor and an analog signal-conditioning circuit have been integrated on a single silicon chip by means of a standard CMOS process followed by micromechanical structuring of the device. The development and design of the sensor system are based on the commercial cell library of the semiconductor manufacturer European Silicon Structures (ES2). Suitable analog cells of the library have been modified regarding the requirements of the sensor system. The electrical elements of the sensor module and the modified circuits have been defined as new library elements and adapted for use in conventional CAD tools. A mechanical simulation model of the piezoresistive sensor has been implemented in an electrical analog simulator. Thus the complete system can be optimized and checked before the fabrication. After balancing of the sensor, the experimental results of the demonstrator device show a total system error of less than 0.7% FSO for a pressure variation from 0 to 1000 mbar and in the temperature range −20 to 80 °C.