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Trapping levels in pulse-counting synthetic diamond detectors
Type Ib synthetic diamonds were used as pulse-counting radiation detectors. Special ion-implanted contacts to the diamond were used. These contacts were shown to suppress the development of space charge within the diamond, and to cause no significant voltage drop across the contacts. An initial larg...
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Published in: | Diamond and related materials 1992-12, Vol.1 (12), p.1185-1189 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Type Ib synthetic diamonds were used as pulse-counting radiation detectors. Special ion-implanted contacts to the diamond were used. These contacts were shown to suppress the development of space charge within the diamond, and to cause no significant voltage drop across the contacts. An initial large γ-ray pre-irradiation dose markedly improved the pulse counting response of the diamond. It is suggested that this improvement is due to relevent and involved traps being filled to saturation by charge carriers whereas the same traps in an under-populated state actively inhibit the charge collection for pulse formation. The traps are depopulated by exposure to ambient light and, using this depopulation effect, the effective energy level of these involved traps was measured to be 2.2 eV. Shallow trapping levels are postulated and are believed to be responsible for the trapping of the carriers which gives rise to space charge effects. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/0925-9635(92)90093-4 |