Space-charge-limited current flow and trap density in undoped diamond films

Nominally undoped, polycrystalline diamond films of various qualities were deposited on p-type silicon substrates by microwave chemical vapour deposition. The diamond films were characterized by Raman spectroscopy, scanning electron microscopy and electrical measurements. Current-voltage measurement...

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Bibliographic Details
Published in:Diamond and related materials 1993-04, Vol.2 (5), p.825-828
Main Authors: Werner, M., Dorsch, O., Hinze, A., Obermeier, E., Harper, R.E., Johnston, C., Chalker, P.R., Buckley-Golder, I.M
Format: Article
Language:English
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Summary:Nominally undoped, polycrystalline diamond films of various qualities were deposited on p-type silicon substrates by microwave chemical vapour deposition. The diamond films were characterized by Raman spectroscopy, scanning electron microscopy and electrical measurements. Current-voltage measurements on one wafer show that the current flow is space charge limited and influenced by traps. The energetic distribution of the trap densities was determined by analysis of the current-voltage characteristic. The trap densities vary over an energy range of 0.2 eV from 10 14 to 10 17 cm −3 eV −1. The energetic trap distribution and trap densities are not locally constant.
ISSN:0925-9635
1879-0062
DOI:10.1016/0925-9635(93)90232-Q