Production of polycrystalline diamond films by d.c. glow discharge CVD

• Published in: Diamond and related materials 1995-05, Vol.4 (7), p.964-967
• Main Authors: Samokhvalov, N.V., Strel'nitskij, V.E., Belous, V.A., Zubar, V.P., Timchuk, A.G., Obraztsova, E.D., Ral'chenko, V.G.
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; d.c. plasma CVD; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nucleation and growth; Physics; Polycrystalline diamond films; Scanning electron microscopy
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/0925-9635(94)00261-4

Polycrystalline diamond films on various substrates (W, Mo, Si, Si 3N 4, SiC and WCo) have been grown by the CVD method in a d.c. glow discharge plasma. The diamond crystal nucleation density was studied as a function of the substrate temperature in the range from 700 to 1100 °C. The experiments at constant discharge parameters have revealed the increase in the diamond nucleation density as the substrate heating temperature decreased. The diamond crystal density varied from 10 3 cm −2 at 900 °C to 10 8 cm −2 at 700 °C. An increase in the diamond nucleation density with decreasing synthesis temperature was observed on all types of substrate material.