Evolution of the density of graphite-like defects during CVD diamond growth

• Published in: Diamond and related materials 1995-05, Vol.4 (7), p.972-976
• Main Authors: von Kaenel, Y., Stiegler, J., Blank, E.
• Format: Article
• Language: English
• Subjects: Chemical vapour deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Diamond defects; Electron paramagnetic resonance; Exact sciences and technology; Infrared and raman spectra and scattering; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other nonmetallic inorganics; Physics; Raman spectroscopy; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/0925-9635(94)00265-7

In order to quantitatively measure the quality of CVD diamond by Raman spectroscopy the spectra of diamond films were decomposed into Raman peaks and luminescence bands. The evolution of the diamond and “G-band” Raman peaks were studied as a function of film thickness for two different growth morphologies. A normalization procedure was used to eliminate the effects on signal intensities of varying probe size, light absorption and scattering. Electron spin resonance was applied to scale normalized peak intensities in terms of defect densities. The grain structure of the thin films strongly affects the normalized G-band intensity. It is demonstrated that graphite-like defects are concentrated in grain boundaries.