Nucleation and growth of CVD diamond on magnesium oxide (100) and titanium nitride-magnesium oxide (100) surfaces

The lattice parameters of cubic MgO(100) and TiN(100) are 4.23Åand 4.21Årespectively. As potential heteroepitaxial substrates for diamond films they represent a lattice mismatch of approximately 18%. This paper reports the nucleation of CVD diamond particles on MgO(100) surfaces using a low temperat...

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Bibliographic Details
Published in:Diamond and related materials 1994-04, Vol.3 (4), p.393-397
Main Authors: Chalker, P.R., Johnston, C., Romani, S., Ayres, C.F., Buckley-Golder, I.M.
Format: Article
Language:English
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Summary:The lattice parameters of cubic MgO(100) and TiN(100) are 4.23Åand 4.21Årespectively. As potential heteroepitaxial substrates for diamond films they represent a lattice mismatch of approximately 18%. This paper reports the nucleation of CVD diamond particles on MgO(100) surfaces using a low temperature process to overcome the thermal etching of the magnesium oxide substrate. Physically vapour-deposited TiN thin films have also been deposited onto MgO(100) substrates with preferred orientation. Doped and undoped CVD diamond was deposited onto TiN MgO(100) substrates to investigate the influence of doping effects on low temperature nucleation and growth.
ISSN:0925-9635
1879-0062
DOI:10.1016/0925-9635(94)90191-0