Stabilization of diamond relative to different substrate—carbon interfaces: a nucleation model for CVD diamond growth based on a charge transfer consideration

The interaction between the carbon phase and the substrate is the determining factor in chemically vapor deposited diamond thin film growth processes. Considering the similarity between (1,1,1) diamond planes and (0,0,0,1) graphite planes, we present calculation results concerning the stabilization...

Full description

Saved in:
Bibliographic Details
Published in:Diamond and related materials 1994-04, Vol.3 (4), p.448-451
Main Authors: Sandré, Eric, Bonnot, Anne-Marie, Cyrot-Lackmann, Françoise
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The interaction between the carbon phase and the substrate is the determining factor in chemically vapor deposited diamond thin film growth processes. Considering the similarity between (1,1,1) diamond planes and (0,0,0,1) graphite planes, we present calculation results concerning the stabilization geometry in respect with interfacial charge transfer between a substrate and or a graphite sheet. We then propose a nucleation model for CVD diamond films based on corrugated graphite precursors.
ISSN:0925-9635
1879-0062
DOI:10.1016/0925-9635(94)90201-1