Nucleation and growth of diamond on a well-defined Si(311) substrate monitored by in vacuo surface analysis

A series of carbon depositions on a clean Si(311) substrate has been monitored in a connected preparation chamber by Auger electron spectroscopy and electron energy loss spectroscopy (EELS). We point out the initial formation of silicon carbide with a large increase in the carbon content. Further de...

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Bibliographic Details
Published in:Diamond and related materials 1994-04, Vol.3 (4), p.569-572
Main Authors: Demuynck, L., Bigorgne, F., Carrière, B., George, A., Michel, J.P., Normand, F.Le
Format: Article
Language:English
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Summary:A series of carbon depositions on a clean Si(311) substrate has been monitored in a connected preparation chamber by Auger electron spectroscopy and electron energy loss spectroscopy (EELS). We point out the initial formation of silicon carbide with a large increase in the carbon content. Further deposition leads to the occurrence of C KVV Auger and EELS features characteristic of diamondtype formation.
ISSN:0925-9635
1879-0062
DOI:10.1016/0925-9635(94)90226-7