Growth and characterization of Si-doped diamond single crystals grown by the HTHP method

Synthetic diamond single crystals grown by the HTHP method were successfully doped with silicon. Various catalysts were used. The 1.68 eV Si centre was found only in specimens grown with N getters, and the best results were obtained with Fe-containing alloys. Photoluminescence from selected regions...

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Bibliographic Details
Published in:Diamond and related materials 1996-05, Vol.5 (6), p.866-869
Main Authors: Sittas, G., Kanda, H., Kiflawi, I., Spear, P.M.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Diamond
Elemental semiconductors
Exact sciences and technology
Growth
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Silicon
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Summary:Synthetic diamond single crystals grown by the HTHP method were successfully doped with silicon. Various catalysts were used. The 1.68 eV Si centre was found only in specimens grown with N getters, and the best results were obtained with Fe-containing alloys. Photoluminescence from selected regions of the specimens showed that the presence of N excludes the presence of the Si centre and the intensity of the emission from the Si centre is not growth sector dependent.
ISSN:0925-9635
1879-0062
DOI:10.1016/0925-9635(95)00449-1