Measurement of surface recombination velocity of silicon wafers under sunlight condition by novel photoluminescence surface state spectroscopy

For a successful realization of super-high efficiency solar cells, reduction of surface or interface recombination is required. Thus, it is important to know the value of the surface recombination velocity ( S) for the optimization of the passivation technology and for the design of solar cells. In...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1994-09, Vol.34 (1), p.161-167
Main Authors: Saitoh, Toshiya, Nishimoto, Youichiro, Hasegawa, Hideki
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:For a successful realization of super-high efficiency solar cells, reduction of surface or interface recombination is required. Thus, it is important to know the value of the surface recombination velocity ( S) for the optimization of the passivation technology and for the design of solar cells. In this paper, a photoluminescence (PL) based novel technique for the measurement of the value of S under sunlight is presented, and applied to variously passivated Si surfaces. S was found not to be constant but to depend strongly on the excitation intensity near and above 1 sun condition. The value of S is strongly reduced under concentrated sunlight indicating that concentration of sunlight or use of a thin film is effective for efficiency increase.
ISSN:0927-0248
1879-3398
DOI:10.1016/0927-0248(94)90036-1