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High-efficient operation of large-area (100 cm 2) thin film polycrystalline silicon solar cell based on SOI structure

High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area over 90% has successfully been obtained by controll...

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Bibliographic Details
Published in:Solar energy materials and solar cells 1994-09, Vol.34 (1), p.257-262
Main Authors: Arimoto, S., Morikawa, H., Deguchi, M., Kawama, Y., Matsuno, Y., Ishihara, T., Kumabe, H., Murotani, T.
Format: Article
Language:English
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Summary:High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area over 90% has successfully been obtained by controlling the ZMR conditions, which allowed to form a uniform random pyramidal structure at the cell surface. The effect of hydrogen passivation has also been investigated for further improvement of the cell characteristics. By employing a light trapping structure (textured surface) and hydrogen passivation, an efficiency of 14.22% was obtained for a practical 100 cm 2 size.
ISSN:0927-0248
1879-3398
DOI:10.1016/0927-0248(94)90048-5