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High-efficient operation of large-area (100 cm 2) thin film polycrystalline silicon solar cell based on SOI structure
High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area over 90% has successfully been obtained by controll...
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Published in: | Solar energy materials and solar cells 1994-09, Vol.34 (1), p.257-262 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | High-efficient operation of a large-area thin film polycrystalline Si solar cell with a novel structure based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. The (100) crystal orientation area over 90% has successfully been obtained by controlling the ZMR conditions, which allowed to form a uniform random pyramidal structure at the cell surface. The effect of hydrogen passivation has also been investigated for further improvement of the cell characteristics. By employing a light trapping structure (textured surface) and hydrogen passivation, an efficiency of 14.22% was obtained for a practical 100 cm
2 size. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/0927-0248(94)90048-5 |