Growth habit of crystals of refractory compounds prepared from high temperature solutions

The growth habit of single crystal refractory compounds (borides, carbides and silicides) obtained using a solution-melt method involving various growth conditions is reviewed. The effect of external and internal factors on the growth habit is analyzed. The influence of such external factors as the...

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Bibliographic Details
Published in:Progress in crystal growth and characterization 1993-01, Vol.27 (3), p.163-199
Main Authors: Gurin, V.N., Derkachenko, L.I.
Format: Article
Language:English
Subjects:
anisotropy
Habit
high temperature solution-melt method
microhardness
morphology
refractory compounds
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Summary:The growth habit of single crystal refractory compounds (borides, carbides and silicides) obtained using a solution-melt method involving various growth conditions is reviewed. The effect of external and internal factors on the growth habit is analyzed. The influence of such external factors as the cooling mode, the cooling rate, the effect of variation of solute concentration, the stoichiometry of the initial components, the presence of additives in the system, the change of the maximum soaking temperature, the nature of the initial components and the solvent metal and microgravity on the growth habit are described. Examples of various anisotrophic properties in crystals of refractory compounds as well as data on crystal michrohardness anisotropy, obtained by the authors, are given. In conclusion the comparative evaluation of the effect of external factors on growth habit is provided.
ISSN:0960-8974
0146-3535
1878-4208
DOI:10.1016/0960-8974(93)90023-W