STM: Seeing is believing

In the last ten years the scanning tunnelling microscope (STM) has completely changed the way in which we look at the surfaces of semiconductor materials. However, due to the conflicting experimental geometries of the two techniques, it is only recently that it has been possible to combine high reso...

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Bibliographic Details
Published in:III-Vs review 1995, Vol.8 (1), p.37-41
Main Authors: Sudijono, J.L., McConville, C.F., Jones, T.S.
Format: Magazinearticle
Language:English
Online Access:Get full text
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Summary:In the last ten years the scanning tunnelling microscope (STM) has completely changed the way in which we look at the surfaces of semiconductor materials. However, due to the conflicting experimental geometries of the two techniques, it is only recently that it has been possible to combine high resolution STM imaging with a full scale MBE system. In this article we demonstrate the application of this technique in obtaining both morphological and atomic resolution images of MBE grown GaAs(001) surfaces and the same surfaces after deposition of Si.
ISSN:0961-1290
1879-0577
DOI:10.1016/0961-1290(95)80157-X