A route from the negative-effective-mass generators to the phonon-difference FIR lasers

Solid-state sources covering the wave number range from 5 to 120 cm −1 are considered. Experimental data on the negative effective masses, the inverted cyclotron resonance transitions, as well as the light-to-heavy hole band transition inversion are compared with existing theoretical models. On the...

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Bibliographic Details
Published in:Infrared physics & technology 1995, Vol.36 (1), p.45-50
Main Author: Brazis, R.
Format: Article
Language:English
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Summary:Solid-state sources covering the wave number range from 5 to 120 cm −1 are considered. Experimental data on the negative effective masses, the inverted cyclotron resonance transitions, as well as the light-to-heavy hole band transition inversion are compared with existing theoretical models. On the basis of this comparison, the phonon-difference process inversion is proposed as a new mechanism of stimulated FIR radiation. Contrary to the previous models which require complicated carrier-energy band structures, like that in p-type Ge, the two-phonon difference radiation is expected to act both in p- and n-type materials. Magnetic fields and cooling down to liquid helium temperatures are not necessary for its operation. Crystalline Si, Ge, A 3B 5, A 2B 6 and other semiconductor compounds are candidates for creating lasers on phonons.
ISSN:1350-4495
1879-0275
DOI:10.1016/1350-4495(94)00052-M