Hydroxyl defects in Ge-doped cultured quartz crystals

• Published in: Infrared physics & technology 1995-04, Vol.36 (3), p.685-690
• Main Author: Bahadur, Harish
• Format: Article
• Language: English
• Subjects: Absorption and reflection spectra: visible and ultraviolet; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electrons and positron radiation effects; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physical radiation effects, radiation damage; Physics; Structure of solids and liquids; crystallography
• ISSN: 1350-4495; 1879-0275
• DOI: 10.1016/1350-4495(94)00095-3

High energy electron (1.75 MeV) from a van de Graaff accelerator have been used to study the radiation response of hydroxyl defects in Ge-doped cultured quartz crystals. The irradiation was performed at 77 K, 300 K and again at 77 K. The results show that at the stage of 300 K-irradiation, the 3481 cm −1 band in the as grown Ge-doped cultured crystals is completely removed and a new radiation-induced band at 3525 cm −1 is observed. This band is expected to represent a possible configuration of [GeO 4e −/Li +] 0 center with a proton in the vicinity. The AlOH − band strengths show a larger intensity ratio of long-bond to short-bond (Al 1/Al s) in the Ge-doped quartz than that usually observed in the conventionally grown cultured crystals.