Band structure calculation of GeSn and SiSn

The band structure of GeSn and SiSn in zinc-blende structures is predicted using the empirical pseudopotential. Special emphasis is placed on the effects of inversions asymmetry such as ionicity. We found that GeSn exhibits a direct band gap whereas SiSn still remains indirect gap material.

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Bibliographic Details
Published in:Infrared physics & technology 1995-08, Vol.36 (5), p.843-848
Main Authors: Amrane, Na, Ait Abderrahmane, S., Aourag, H.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Metals. Metallurgy
Physics
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Description
Summary:The band structure of GeSn and SiSn in zinc-blende structures is predicted using the empirical pseudopotential. Special emphasis is placed on the effects of inversions asymmetry such as ionicity. We found that GeSn exhibits a direct band gap whereas SiSn still remains indirect gap material.
ISSN:1350-4495
1879-0275
DOI:10.1016/1350-4495(95)00019-U