(001)-oriented lead selenide films grown on silicon substrates

Lead selenide epitaxial films were grown on silicon substrates using a thin (⩽100 nm) YbS buffer layer. The films were (001)-oriented and had structural, electrical and photoelectrical properties comparable with those of PbSe bulk crystals. The X-ray rocking curve halfwidths were of 100–200 arcsec w...

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Bibliographic Details
Published in:Infrared physics & technology 1996-04, Vol.37 (3), p.379-384
Main Authors: Tetyorkin, V.V., Sipatov, A.Yu, Sizov, F.F., Fedorenko, A.I., Fedorov, A.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Ii-vi semiconductors
Physics
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Summary:Lead selenide epitaxial films were grown on silicon substrates using a thin (⩽100 nm) YbS buffer layer. The films were (001)-oriented and had structural, electrical and photoelectrical properties comparable with those of PbSe bulk crystals. The X-ray rocking curve halfwidths were of 100–200 arcsec which are within similar values for PbSe/BaF 2(CaF 2)/Si films, thoroughly investigated for infrared detector array applications. The films investigated exhibit relatively large photosensitivity in the temperature range T = 80–300 K. Minority carrier lifetime values τ ≈ 10 −6s at 80K and their temperature dependencies are preferably determined by the Schockley-Read-Hall recombination mechanism through the deep levels in the band gap.
ISSN:1350-4495
1879-0275
DOI:10.1016/1350-4495(95)00065-8