Fractal dimension analysis of polyacenic semiconductive (PAS) materials

The fractal dimensions D of the pristine and the Li-doped polyacenic semiconductive (PAS) materials have been analyzed by small-angle X-ray scattering (SAXS) and compared with that of graphite. It has become clear that the Li doping generally makes D smaller, which suggests fixation effect of the na...

Full description

Saved in:
Bibliographic Details
Published in:Carbon (New York) 2001-01, Vol.39 (10), p.1599-1603
Main Authors: Tanaka, Kazuyoshi, Ito, Akihiro, Yoshii, Takao, Suehiro, Shoji, Nagura, Satoshi, Ando, Nobuo, Hato, Yukinori
Format: Article
Language:English
Subjects:
A. Non-graphitic carbon
Applied sciences
B. Doping
C. Small angle X-ray scattering
Exact sciences and technology
Organic polymers
Physicochemistry of polymers
Properties and characterization
Structure, morphology and analysis
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The fractal dimensions D of the pristine and the Li-doped polyacenic semiconductive (PAS) materials have been analyzed by small-angle X-ray scattering (SAXS) and compared with that of graphite. It has become clear that the Li doping generally makes D smaller, which suggests fixation effect of the nanopores on the surface of the material by the doped Li atoms. It is pointed out that the fractal dimension analysis affords an alternative picture to the conventional N 2 adsorption and rather new technique using 129Xe nuclear magnetic resonance method in discussion of the surface structures for general amorphous carbon particularly when it is doped or mixed with binders.
ISSN:0008-6223
1873-3891
DOI:10.1016/S0008-6223(00)00285-2