ZnO thin films prepared by remote plasma-enhanced CVD method

High-quality ZnO films were successfully prepared by a remote plasma-enhanced CVD of Zn(C 2H 5) 2 and carbon dioxide. Plasma excitation in carbon dioxide was critically important to deposit films with good crystallinity. Epitaxial growth could be achieved on (0 0 0 2) or (0 1 1 ̄ 2) oriented single-...

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Bibliographic Details
Published in:Journal of crystal growth 2000-06, Vol.214, p.77-80
Main Authors: Haga, K, Kamidaira, M, Kashiwaba, Y, Sekiguchi, T, Watanabe, H
Format: Article
Language:English
Subjects:
CVD
Epitaxial
Plasma
Sapphire
ZnO
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Summary:High-quality ZnO films were successfully prepared by a remote plasma-enhanced CVD of Zn(C 2H 5) 2 and carbon dioxide. Plasma excitation in carbon dioxide was critically important to deposit films with good crystallinity. Epitaxial growth could be achieved on (0 0 0 2) or (0 1 1 ̄ 2) oriented single-crystal sapphire substrates using this simple system. Reflection high-energy electron diffraction and X-ray diffraction patterns show that the ZnO(1 1 2 ̄ 0) plane is formed on the sapphire (0 1 1 ̄ 2) plane and the ZnO(0 0 0 2) plane is formed on the sapphire (0 0 0 2) plane. Cathodoluminescence spectra of the epitaxial films grown at plasma discharge voltage of 3.6 kV consist of a sharp band at 380 nm and a broad band centered at 620 nm.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00068-3