Solid-phase recrystallization of ZnS ceramics in phase transition region

ZnS monocrystals, grown by solid-phase recrystallization (SPR) during hot pressing in the phase transition (PT) region are shown to have been improved by the doping of In. SPR of undoped and Al- or Ga-doped ZnS has not been successful. X-ray Laue patterns of as-grown ZnS monocrystal showed cubic sym...

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Bibliographic Details
Published in:Journal of crystal growth 2000-06, Vol.214, p.894-898
Main Authors: Lott, K, Anan’eva, G, Gorokhova, E
Format: Article
Language:English
Subjects:
Crystal growth
Electrical conductivity
Phase transitions
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Summary:ZnS monocrystals, grown by solid-phase recrystallization (SPR) during hot pressing in the phase transition (PT) region are shown to have been improved by the doping of In. SPR of undoped and Al- or Ga-doped ZnS has not been successful. X-ray Laue patterns of as-grown ZnS monocrystal showed cubic symmetry. Scanning electron microscope investigation of the boundary surface between the monocrystalline and the polycrystalline parts of the as-grown ZnS : In ceramic disk showed an abnormal growth of crystallites into a monocrystal. To explain the role of In, high-temperature electrical conductivity (HTEC) measurements were performed. The temperature region from 1000°C to 500°C on the HTEC isobar of ZnS : In monocrystal was “cleared” from step-like PT changes, obligatorily observed on isobars of undoped and Cu-doped ZnS isobars in this region.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00216-5