Efficient blue–green light-emitting diodes of ZnSSe : Te/ZnMgSSe DH structure grown by molecular-beam epitaxy

We have investigated the optical properties of Te-doped ternary ZnSSe epilayers grown on (1 0 0) GaAs substrates by molecular-beam epitaxy for the first time. The case of ZnS x Se 1− x−y : Te y ( x=0.11, y=0.042) specimen is represented by a good crystal quality; a good lattice matching to GaAs (Δ a...

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Bibliographic Details
Published in:Journal of crystal growth 2000-06, Vol.214, p.1096-1099
Main Authors: Lee, Hong Chan, Abe, Tomoki, Watanabe, Masashi, Aung, Zaw Min, Adachi, Masahiro, Shirai, Toru, Yamada, Hiroshi, Kuroda, Shingo, Kasada, Hirofumi, Ando, Koshi
Format: Article
Language:English
Subjects:
Double hetero (DH)
Light-emitting diode (LED)
MBE
Te cluster emission
Te-doped ZnSSe
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Summary:We have investigated the optical properties of Te-doped ternary ZnSSe epilayers grown on (1 0 0) GaAs substrates by molecular-beam epitaxy for the first time. The case of ZnS x Se 1− x−y : Te y ( x=0.11, y=0.042) specimen is represented by a good crystal quality; a good lattice matching to GaAs (Δ a/ a
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00281-5