Demonstration of blue-ultraviolet avalanche photo-diodes of II–VI wide bandgap compounds grown by MBE

This paper presents the first demonstration of blue-ultraviolet avalanche photo-diode (APD) operation using II–VI wide bandgap semiconductor ZnSe, grown on GaAs substrate by molecular-beam epitaxy. With improving crystal quality on macroscopic defects as well as an effective mesa-etching technology,...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2000-06, Vol.214, p.1134-1137
Main Authors: Abe, Tomoki, Ishikura, Hitoshi, Fukuda, Nariyuki, Aung, Zaw Min, Masahiro Adachi, Kasada, Hirofumi, Ando, Koshi
Format: Article
Language:English
Subjects:
APD operation
Blue-ultraviolet photodetector
MBE
Photo-diode
ZnSe
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents the first demonstration of blue-ultraviolet avalanche photo-diode (APD) operation using II–VI wide bandgap semiconductor ZnSe, grown on GaAs substrate by molecular-beam epitaxy. With improving crystal quality on macroscopic defects as well as an effective mesa-etching technology, the p +–n structure ZnSe diode has shown a distinct APD operation with a large avalanche gain of G=50 under high reverse bias of 27 V at room temperature.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00289-X