Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers

The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different generation area of vacancy-related defects. Oxygen precipitation is more enhanced in vacancy-rich region than in interstitial-rich region. The behavior of oxygen precipitation in the radial direc...

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Bibliographic Details
Published in:Journal of crystal growth 2000-05, Vol.213 (1), p.57-62
Main Authors: Hwang, Don-Ha, Lee, Bo-Young, Yoo, Hak-Do, Kwon, Oh-Jong
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Exact sciences and technology
Growth from melts
zone melting and refining
Materials science
Methods of crystal growth
physics of crystal growth
Oxygen precipitation
Physics
Point defects (vacancies, interstitials, color centers, etc.) and defect clusters
Regional division
Silicon
Structure of solids and liquids
crystallography
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Summary:The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different generation area of vacancy-related defects. Oxygen precipitation is more enhanced in vacancy-rich region than in interstitial-rich region. The behavior of oxygen precipitation in the radial direction is strongly dependent on the size of vacancy-rich region which is related to crystal growth condition. Anomalous oxygen precipitation occurred in the marginal vacancy-rich region and the inner edge of interstitial rich region. In the marginal interstitial-rich region, however, oxygen precipitation is suppressed to nearly zero.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00318-3