(1 1 1)B growth elimination in GaAs MBE of (0 0 1)-(1 1 1)B mesa structure by suppressing 2D-nucleation

• Published in: Journal of crystal growth 2000-05, Vol.212 (3), p.373-378
• Main Authors: Kishimoto, D., Nishinaga, T., Naritsuka, S., Noda, T., Nakamura, Y., Sakaki, H.
• Format: Article
• Language: English
• Subjects: 2D-nucleation; Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; GaAs; Incorporation lifetime; Inter-surface diffusion; Materials science; MBE; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface diffusion coefficient
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(00)00332-8

MBE growth of GaAs mesa structure consisting of (0 0 1) top and (1 1 1)B side surfaces was studied and the ratio of growth rate on (1 1 1)B facet to that on (0 0 1) was measured in various growth conditions. The value changed drastically, from 0 to 0.8, depending on the growth conditions. It was found that complete growth elimination occurred on (1 1 1)B facet by decreasing incident Ga flux and suppressing 2D-nucleation. We obtained various information from these experiments about elementary process of GaAs MBE, including critical Ga adatom concentration for 2D-nucleation on (1 1 1)B surface and (1 1 1)B-(0 0 1) inter-surface diffusion.