2D-nucleation on (1 1 1)B micro-facet studied by microprobe-RHEED in GaAs MBE for mesa-structure fabrication

2D-nucleation on GaAs (111)B micro-facet was studied by using microprobe-RHEED/ SEM MBE. The RHEED intensity oscillation on the (111)B facet was observed only when incident Ga flux was relatively large, and the oscillation disappeared by reducing Ga flux. It is indicated that, 2D-nucleation on (111)...

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Bibliographic Details
Published in:Journal of crystal growth 2000-06, Vol.216 (1-4), p.1-5
Main Authors: Kishimoto, D, Ogura, T, Yamashiki, A, Nishinaga, T, Naritsuka, S, Sakaki, H
Format: Article
Language:English
Subjects:
2D-nucleation
Cross-disciplinary physics: materials science
rheology
Diffusion coefficient
Exact sciences and technology
GaAs
Incorporation lifetime
Inter-surface diffusion
Materials science
MBE
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Surface diffusion length
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Summary:2D-nucleation on GaAs (111)B micro-facet was studied by using microprobe-RHEED/ SEM MBE. The RHEED intensity oscillation on the (111)B facet was observed only when incident Ga flux was relatively large, and the oscillation disappeared by reducing Ga flux. It is indicated that, 2D-nucleation on (111)B surface occurs only when incident Ga flux is large enough so that surface Ga adatoms accumulate sufficiently to start 2D-nucleation, otherwise all of the Ga adatoms flow away by inter-surface diffusion to (001) where they are incorporated into the crystal. By using simple rate equations, we show that it is possible to estimate the critical value of Ga adatom concentration for nucleation and Ga incorporation lifetime on GaAs (111)B surface.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00403-6