Crack formation in Zn3As2 epilayers grown by MOVPE

Zn3As2 films of varying thicknesses were grown on a variety of substrates. Scanning electron microscopy analysis of surface morphology revealed cracks in the film–substrate combinations for thicker epilayers. Theoretical calculations of critical layer thicknesses when cracking will occur, based on n...

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Bibliographic Details
Published in:Journal of crystal growth 2000-06, Vol.216 (1-4), p.235-244
Main Authors: Engelbrecht, J.A.A, Scriven, G.J, Neethling, J.H, Wagener, M.C
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cracks
Cross-disciplinary physics: materials science
rheology
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
MOVPE
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Vapor phase epitaxy
growth from vapor phase
Zn3As2
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Summary:Zn3As2 films of varying thicknesses were grown on a variety of substrates. Scanning electron microscopy analysis of surface morphology revealed cracks in the film–substrate combinations for thicker epilayers. Theoretical calculations of critical layer thicknesses when cracking will occur, based on nucleation theories, fail to adequately explain the origin of the cracks. Furthermore, strain present in the overgrowth, due to the thermal mismatch with the substrates, is not large enough to cause cracking, despite the fact that empirical evidence favours this mechanism. It is likely that a combination of lattice and thermal mismatch is the reason for the formation of the cracks.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00453-X