Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells

In this paper we have studied the effect of MOVPE growth conditions on the arsenic incorporation in strained InAsP quantum wells (QWs) grown on InP substrates. Lower growth temperatures result in an enhanced arsenic incorporation, as well as an improvement in the quality of the heterostructure. It i...

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Bibliographic Details
Published in:Journal of crystal growth 2000-12, Vol.221 (1), p.535-539
Main Authors: Venkataraghavan, R, Gokhale, M.R, Shah, A.P, Bhattacharya, A, Chandrasekaran, K.S, Arora, B.M
Format: Article
Language:English
Subjects:
Arsenic incorporation
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
InAsP
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Photoluminescence
Physics
Quantum well
Strain
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Vapor phase epitaxy
growth from vapor phase
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Summary:In this paper we have studied the effect of MOVPE growth conditions on the arsenic incorporation in strained InAsP quantum wells (QWs) grown on InP substrates. Lower growth temperatures result in an enhanced arsenic incorporation, as well as an improvement in the quality of the heterostructure. It is seen that an increase in the arsine flux does not readily increase the arsenic composition in the film which is dependent on temperature, strain and growth conditions.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00765-X