Magnetic and optical properties of Mn-including InAs dots grown by metalorganic molecular beam epitaxy

Mn-including InAs dot structures are grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE), where Mn atoms are first deposited and then TMIn (trimethylindium) and TDMAAs (trisdimethylaminoarsenic) are supplied on GaAs substrate. Mn-including InAs dots as well as Stranski–Krastanov...

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Bibliographic Details
Published in:Journal of crystal growth 2000-12, Vol.221 (1), p.605-610
Main Authors: Zhou, Y.K, Asahi, H, Asakura, J, Okumura, S, Asami, K, Gonda, S
Format: Article
Language:English
Subjects:
AFM
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
InAs
Interfacial magnetic properties (multilayers, magnetic quantum wells, superlattices, magnetic heterostructures)
Magnetic properties and materials
Magnetic properties of nanostructures
Magnetic properties of surface, thin films and multilayers
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
MFM
Molecular, atomic, ion, and chemical beam epitaxy
MOMBE
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Quantum dot
Quantum dots
SQUID
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Summary:Mn-including InAs dot structures are grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE), where Mn atoms are first deposited and then TMIn (trimethylindium) and TDMAAs (trisdimethylaminoarsenic) are supplied on GaAs substrate. Mn-including InAs dots as well as Stranski–Krastanov (S–K) mode-grown small-size InAs dots are formed on the surface. Magnetization measurement using a SQUID (superconducting quantum interference device) indicates that the easy axis of magnetization for the Mn-including InAs dots is perpendicular to the GaAs surface. The temperature dependence of magnetization suggests that Mn atoms nuclei may consist of MnGa or MnGa-rich MnGaAs. The formation process of Mn-including InAs dots is studied and the growth condition that only Mn-including InAs dots (disk-like dots) are formed is obtained. Photoluminescence (PL) emission from Mn-including InAs dots is observed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(00)00786-7