Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE

Strain compensated 1.3 μm InAsP/InGaAsP laser structures have been grown by using gas source MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 1...

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.329-333
Main Authors: Zhang, Y.G, Chen, J.X, Chen, Y.Q, Qi, M, Li, A.Z, Fröjdh, Krister, Stoltz, Björn
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
B2. Semiconducting III-V materials
B3. Laser ciodes
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Summary:Strain compensated 1.3 μm InAsP/InGaAsP laser structures have been grown by using gas source MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 10 mA at room temperature, with slope efficiency greater than 0.35 W/A/un-coated facet. The characteristic temperature of the threshold current were greater than 90 K from 25°C to 90°C. The spectral and far field characteristics of those laser chips also have been investigated.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00715-1