Long wavelength InGaAs–InGaAlAs–InP lasers grown in MBE

We have grown InGaAs–InGaAlAs–InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm 2 at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 1...

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.334-337
Main Authors: Kuang, G.K, Böhm, G, Grau, M, Rösel, G, Amann, M.-C
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
B3. Laser diodes
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Summary:We have grown InGaAs–InGaAlAs–InP strained quantum well lasers with wavelength up to 2.2 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm 2 at room temperature has been achieved for 2.2 μm lasers. Continuous-wave operation at temperature as high as 100°C has been demonstrated and a characteristic temperature of 72 K has been achieved for 1.79 μm lasers.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00716-3