InSb thin films grown on GaAs substrate and their magneto-resistance effect

InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-doped InSb thin films with large electron mobility (4....

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.619-624
Main Authors: Okamoto, Atsushi, Ashihara, Arata, Akaogi, Takayuki, Shibasaki, Ichiro
Format: Article
Language:English
Subjects:
A1. Doping
A3. Molecular beam epitaxy
B1. Antimonides
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Summary:InSb thin films were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). N-type impurity (Sn and Si) doping of InSb was investigated for the purpose of reducing its temperature dependence of resistivity. It was found that stable Sn-doped InSb thin films with large electron mobility (4.5×10 4 cm 2/V s) and sheet electron concentration (7.2×10 12 cm −2) can be fabricated. Magneto-resistance (MR) devices using these films show a large enough MR effect and an extremely small temperature dependence of resistance.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00784-9