Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

We have grown MgS by MBE in the zinc blende crystal structure on GaAs (1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619±0.0001 nm and Poi...

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.634-638
Main Authors: Bradford, C, O’Donnell, C.B, Urbaszek, B, Balocchi, A, Morhain, C, Prior, K.A, Cavenett, B.C
Format: Article
Language:English
Subjects:
A1. X-ray diffraction
A3. Molecular beam epitaxy
A3. Superlattices
B1. Sulfides
B2. Semiconducting II–VI materials
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Summary:We have grown MgS by MBE in the zinc blende crystal structure on GaAs (1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619±0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00787-4