Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have...

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.655-659
Main Authors: Prior, K.A, Telfer, S.A, Tang, X, Morhain, C, Urbaszek, B, O’Donnell, C, Tomasini, P, Balocchi, A, Cavenett, B.C
Format: Article
Language:English
Subjects:
A1. X-ray diffraction
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Cadmium compounds
B1. Sulfides
B1. Zinc compounds
B2. Semiconducting II–VI materials
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Summary:In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00792-8