Semiconductor crystal optimization of gamma detection

Semiconductor gamma detector systems, that are not sensitive to hole trapping, are improved by trading off the bulk electrical resistivity and the gamma electrons’ lifetime. CdTe and CdZnTe detectors are prepared from donor doped crystals, grown by the low pressure Bridgman method with cadmium vapor...

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Bibliographic Details
Published in:Journal of crystal growth 2001-05, Vol.225 (2-4), p.114-117
Main Author: Lachish, Uri
Format: Article
Language:English
Subjects:
A1. Doping
A1. Radiation
A2. Bridgman technique
B1. Cadmium compounds
B2. Semiconducting II-VI materials
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
X- and γ-ray instruments and techniques
X- and γ-ray sources, mirrors, gratings and detectors
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Summary:Semiconductor gamma detector systems, that are not sensitive to hole trapping, are improved by trading off the bulk electrical resistivity and the gamma electrons’ lifetime. CdTe and CdZnTe detectors are prepared from donor doped crystals, grown by the low pressure Bridgman method with cadmium vapor pressure control. Donor doping, and annealing in tellurium vapors, adjusts the crystal's electrical resistance to high n-type value. The level of doping optimizes detector operation. Uniform detector arrays with good energy resolution are achieved.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00831-4