Improved electroluminescence of InAs quantum dots with strain reducing layer

The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL...

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Bibliographic Details
Published in:Journal of crystal growth 2001-07, Vol.227, p.1044-1048
Main Authors: Yeh, Nien-Tze, Nee, Tzer-En, Chyi, Jen-Inn, Chia, Chih-Ta, Hsu, Tzu-Min, Huang, Chien-Chi
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
A3. Quantum dots
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Summary:The effects of the arrangement between InAs quantum dots and InGaAs strain-reducing layer (SRL) on the optical properties of quantum dot light emitting diodes are investigated. Electroluminescence wavelength longer than 1.3 μm is obtained as InAs quantum dots (QDs) are covered with a thin InGaAs SRL. For the same sample, the full-width at half-maximum of the ground state emission peak is as narrow as 19 meV at low injection current, and less than 40 meV even at saturation condition. It is also found that the slope efficiency of the diode is higher than that of the other samples in the linear region and its light output saturation level is higher because of the higher density of QDs.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)00985-X