Growth and conductive type control of ZnSe single crystals by vertical Bridgman method

• Published in: Journal of crystal growth 2001-07, Vol.229 (1), p.69-73
• Main Authors: Wang, J.F, Omino, A, Isshiki, M
• Format: Article
• Language: English
• Subjects: A1. Doping; A2. Bridgman technique; A2. Growth from melt; B1. Zinc compounds; B2. Semiconducting II–VI materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Cross-disciplinary physics: materials science; rheology; Electronic transport in condensed matter; Exact sciences and technology; Growth from melts; zone melting and refining; Ii-vi semiconductors; Iii-v and ii-vi semiconductors; Materials science; Methods of crystal growth; physics of crystal growth; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01096-X

A closed, double-crucible has been proved to be very successful for preventing the deviation from the stoichiometric compositions of the melt in the process of ZnSe Bridgman growth, and to be necessary for preparing large twin-free ZnSe single crystals. Under the optimized growth conditions, ZnSe crystals have been grown from the source materials with different composition ratio (Zn/Se) of 1.03–0.98. Photoluminescence spectra show that the I 1 d, I 2 and I 1 emissions are dominant for sample is with Zn/Se=1, Zn/Se>1, and Zn/Se1 is low-resistivity, n-type, and Zn/Se