Optical and electrical properties of Be doped GaN bulk crystals

Highly resistive GaN : Be was obtained by means of synthesis of Ga+Be with atomic nitrogen under high nitrogen pressure. Activation energy of resistivity is about 1.5 eV. This material exhibits features very different from those observed in highly resistive bulk GaN : Mg. Up to 300 K strong yellow b...

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Bibliographic Details
Published in:Journal of crystal growth 2001-09, Vol.230 (3), p.368-371
Main Authors: Suski, T., Litwin-Staszewska, E., Perlin, P., Wisniewski, P., Teisseyre, H., Grzegory, I., Bockowski, M., Porowski, S., Saarinen, K., Nissilä, J.
Format: Article
Language:English
Subjects:
A1. Doping
A2. Single crystal growth
B1. Nitrides
B2. Semiconducting III–V materials
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Iii-v semiconductors
Low-field transport and mobility
piezoresistance
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
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Summary:Highly resistive GaN : Be was obtained by means of synthesis of Ga+Be with atomic nitrogen under high nitrogen pressure. Activation energy of resistivity is about 1.5 eV. This material exhibits features very different from those observed in highly resistive bulk GaN : Mg. Up to 300 K strong yellow band dominates photoluminescence spectrum in resistive GaN : Be crystals. Positron annihilation studies point to the presence of gallium vacancies, V Ga. In highly resistive GaN:Mg neither yellow band with considerable intensity, nor detectable concentration of V Ga was found. We also discuss the puzzling findings in highly resistive bulk GaN : Be of morphological features typical for highly conducting bulk n-GaN material.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)01268-4