Crystal growth by micro-pulling-down of Ca3Ga2Ge4O14 (CGG) type-Sr3Nb1-xGa3+ (5/3)xSi2O14 compounds

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Bibliographic Details
Published in:Journal of crystal growth 2001-06, Vol.226 (1), p.101-106
Main Authors: IL HYOUNG JUNG, YOSHIKAWA, Akira, LEBBOU, Kheirreddine, FUKUDA, Tsuguo, KEUN HO AUH
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Dielectric, piezoelectric, ferroelectric and antiferroelectric materials
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Elements, oxides, nitrides, borides, carbides, chalcogenides, etc
Exact sciences and technology
Growth from melts
zone melting and refining
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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ISSN:0022-0248
1873-5002
DOI:10.1016/s0022-0248(01)01356-2