Surface step model for micropipe formation in SiC

Silicon carbide (SiC) single crystals, a promising material for high power and high temperature semiconductor devices, have microscopic hollow defects, so-called “micropipes.” Their formation mechanism is not satisfactorily clarified yet. In this paper, a surface step model for micropipe formation i...

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Bibliographic Details
Published in:Journal of crystal growth 2001-06, Vol.226 (2), p.254-260
Main Authors: Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Aigo, Takashi, Yashiro, Hirokatsu
Format: Article
Language:English
Subjects:
A1. Defects
A1. Morphological stability
A1. Surface structure
A2. Growth from vapor
A2. Single crystal growth
B2. Semiconducting silicon compounds
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Microscopic defects (voids, inclusions, etc.)
Physics
Structure of solids and liquids
crystallography
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Summary:Silicon carbide (SiC) single crystals, a promising material for high power and high temperature semiconductor devices, have microscopic hollow defects, so-called “micropipes.” Their formation mechanism is not satisfactorily clarified yet. In this paper, a surface step model for micropipe formation in SiC single crystals is proposed, where the strong repulsive interaction between surface steps on the SiC(0 0 0 1) surface is a major driving force for coalescing unit cell size screw dislocations.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(01)01387-2