Compositional variation in as-grown GaInNAs/GaAs quantum well structures

• Published in: Journal of crystal growth 2001-11, Vol.233 (1), p.1-4
• Main Authors: Chalker, P.R, Davock, H, Thomas, S, Joyce, T.B, Bullough, T.J, Potter, R.J, Balkan, N
• Format: Article
• Language: English
• Subjects: A3. Chemical beam epitaxy; A3. Quantum wells; B2. Semiconducting II-V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Ii-vi semiconductors; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01535-4

The variation of elemental composition in as-grown GaInNAs/GaAs quantum well structures has been investigated by energy dispersive X-ray analysis of cross-sections using a high resolution scanning transmission electron microscope. The formation of quaternary GaInNAs dot structures is indicated by low temperature photoluminescence measurements and by the correlation of indium and nitrogen distributions. The distributions of arsenic and nitrogen across the well structure suggest the presence of a continuous nitride-like layer formed at the surface of the GaAs buffer layer before the GaInNAs dots. The influence of this nitride-like interlayer on the mechanism of GaInNAs dot formation is discussed.